| Summary: | 碩士 === 逢甲大學 === 電機工程研究所 === 86 === Due to the promotion in speed and the precision of analog
circuit in recent years, the accurate analysis of device
matching is more and more important. Designer needs to
accurately predict the mismatch parameters of the device while
they are designing a circuit. Rough estimation of the mismatch
parameters are not sufficient anymore. In our study, we
develop a novel characterization method and propose an effective
device mismatch model. We use a set of mismatch parameters to
characterize the mismatch of the drain current in different gate
and drain biases. The mismatch parameter include threshold
voltage mismatch, current gain factor mismatch, source-drain
series resistance mismatch and DIBL effect. Finally, we also
study the matching characteristics of operational amplifier.
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