Study of the Physical Properties on GaN:Si and GaN:Mg
碩士 === 中原大學 === 應用物理研究所 === 86 === In this letter, we report a systematic study accomplished with a series of Si-doped GaN epilayers with the carrier concentrations of 1016~1018 cm-3 in order tninvestigate the evolution of stress relaxation and yellow luminescence by Si incorporation. As...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72147001898098135668 |