| Summary: | 碩士 === 中原大學 === 應用物理研究所 === 86 === We have investigated the Ⅱ-Ⅵ Zn1-xMnxSe wide band-gap diluted magnetic semiconductor (DMS) grown by molecular beam epitaxy (MBE). We studied the optical properties of Zn1-xMnxSe by contactless electroreflectance (CER). We got the exciton transition energy in different temperature. We have analyzed exciton transition energy and temperature in teams of both Varshni and O''Donnell expression. The exciton transition energy is shifted to higher energy as temperature decreases. At the same time, We have got the exciton transition energy in different x values. The exciton transition energy is also shifted to higher energy as x values increases. In our experiment, we found that the split of the exciton transition energy was caused by the lattice mismatch between the epilayer and the substrate, also is related with the concentration of Mn. The split of the energy is smaller as the temperature decrease, because of the thermal expansion coefficients were different between the epilayer and substrate.
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