Growth and Characterization of Zn1-xMnxSe1-yTey
碩士 === 中原大學 === 應用物理研究所 === 86 === Zn1-xMnxSe1-yTey epilayers were grown on GaAs substrates by molecular beamepitaxy. The optical properties have also been studied. In the case ofZnSe1-yTey epilayers, the growth rate, which were estimated from thereflectance spectra, depend on the flux of...
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ndltd-TW-086CYCU05040222016-01-22T04:17:09Z http://ndltd.ncl.edu.tw/handle/95030970229087770557 Growth and Characterization of Zn1-xMnxSe1-yTey 碲硒化錳鋅磊晶層的成長與特性研究 Yang Chu-Shou 楊祝壽 碩士 中原大學 應用物理研究所 86 Zn1-xMnxSe1-yTey epilayers were grown on GaAs substrates by molecular beamepitaxy. The optical properties have also been studied. In the case ofZnSe1-yTey epilayers, the growth rate, which were estimated from thereflectance spectra, depend on the flux of VI group. The transition energies, which were obtained from the transmission spectra, are characterized by the band to band excitonic transitions. While, inthe photoluminescence spctra (10K), the optical transitions weredominated by the excition bound to Te clusters. A Te bound exciton andan exciton bound to Te cluster in the photoluminescence spectra hasbeen identified. The threshold temperature for the observation of theTe bound exciton in the photoluminescence spectra of ZnSe1-yTey epilayerswas found to increase with the Te concentrations. When y>0.04, regardlessof how high the temperature is increased, the single Te-bound excitonis no longer observable. ZnSe1-yTey epilayers also were grown on a GaAs (100) substrate with 0°,3°,10°, and 15° tilts toward [110].The energy gap was found to increase with the substrate tilt angle.While, in the case of Zn1-xMnxSe1-yTey epilayers (x≠0), a novelphotoluminescence channel was proposed to explain the enhancementof the 4T1 to 6A1 transitions of the Mn ion. Chou Wu-Ching 周武清 1998 學位論文 ; thesis 0 zh-TW |
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碩士 === 中原大學 === 應用物理研究所 === 86 === Zn1-xMnxSe1-yTey epilayers were grown on GaAs substrates by molecular beamepitaxy. The optical properties have also been studied. In the case ofZnSe1-yTey epilayers, the growth rate, which were estimated from thereflectance spectra, depend on the flux of VI group. The transition energies, which were obtained from the transmission spectra, are characterized by the band to band excitonic transitions. While, inthe photoluminescence spctra (10K), the optical transitions weredominated by the excition bound to Te clusters. A Te bound exciton andan exciton bound to Te cluster in the photoluminescence spectra hasbeen identified. The threshold temperature for the observation of theTe bound exciton in the photoluminescence spectra of ZnSe1-yTey epilayerswas found to increase with the Te concentrations. When y>0.04, regardlessof how high the temperature is increased, the single Te-bound excitonis no longer observable. ZnSe1-yTey epilayers also were grown on a GaAs (100) substrate with 0°,3°,10°, and 15° tilts toward [110].The energy gap was found to increase with the substrate tilt angle.While, in the case of Zn1-xMnxSe1-yTey epilayers (x≠0), a novelphotoluminescence channel was proposed to explain the enhancementof the 4T1 to 6A1 transitions of the Mn ion.
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author2 |
Chou Wu-Ching |
author_facet |
Chou Wu-Ching Yang Chu-Shou 楊祝壽 |
author |
Yang Chu-Shou 楊祝壽 |
spellingShingle |
Yang Chu-Shou 楊祝壽 Growth and Characterization of Zn1-xMnxSe1-yTey |
author_sort |
Yang Chu-Shou |
title |
Growth and Characterization of Zn1-xMnxSe1-yTey |
title_short |
Growth and Characterization of Zn1-xMnxSe1-yTey |
title_full |
Growth and Characterization of Zn1-xMnxSe1-yTey |
title_fullStr |
Growth and Characterization of Zn1-xMnxSe1-yTey |
title_full_unstemmed |
Growth and Characterization of Zn1-xMnxSe1-yTey |
title_sort |
growth and characterization of zn1-xmnxse1-ytey |
publishDate |
1998 |
url |
http://ndltd.ncl.edu.tw/handle/95030970229087770557 |
work_keys_str_mv |
AT yangchushou growthandcharacterizationofzn1xmnxse1ytey AT yángzhùshòu growthandcharacterizationofzn1xmnxse1ytey AT yangchushou dìxīhuàměngxīnlěijīngcéngdechéngzhǎngyǔtèxìngyánjiū AT yángzhùshòu dìxīhuàměngxīnlěijīngcéngdechéngzhǎngyǔtèxìngyánjiū |
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