Optical Spectroscopy in II-VI Compound Semiconductors

• Main Authors: Lin Jia Mei, 林佳美
• Other Authors: Wu Ching Chou
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/73112354541332301976

碩士 === 中原大學 === 應用物理研究所 === 86 === In this thesis, the ZnSe-based compound semiconductors were grown on GaAs (100)-oriented by molecular beam epitaxy (MBE) method. The reflectivity spectroscopy wasused to study the strain effect of the ZnSeS epilayers grown on GaAs substrates withdifferent sulphur concentration and various substrate misorientation angle.The strainof the ZnSeS epilayers was found to be a linear relation with the sulphur concen-tration increasing. No clear dependence between the substrate misorientation angle and the strain was found.The photoluminescence spectroscopy was also used to investigate the ideal growthcondition of the ZnSe-based compound semiconductors. For ZnSe, we can obtain the best photoluminescence structure as the flux ratio [Se]/[Zn] is around 2. The optimum substrate misorientation angle (SMA) of the GaAs substrate is 10 degrees for the growth of the ZnSeS epilayers. In this thesis, the ideal growth condition of the ZnMgSSe was also discussed.