Characterizations of the Tm-doped InGaAs layers grown by liquid phase epitaxy.
碩士 === 中原大學 === 電子工程研究所 === 86 === Recently, studies on the effects of doping rare-earth (RE) elements onIII-V compound semiconductors have attracted much attention since theseelements, such as Yb, Gd, and Er exhibit impurity gettering effect due totheir strong affinity to oxygen and other group VI...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98767696662263850833 |