| Summary: | 碩士 === 國立中正大學 === 化學研究所 === 86 === In this thesis, Ag2O compound has been used as the reactant
to produce a series of monovalent silver compounds, such as [(
hfac)Ag(BTMSA)], [(tfac)Ag(BTMSA)], [(fod)Ag(BTMSA)], [(Ttfac)
Ag(BTMSA)], [(hfac)Ag(TEVS)], [(Ttfac)Ag(TEVS)], [(Btfac)Ag(
TEVS)], [(hfac)Ag(TMVS)], [(tfac)Ag(TMVS)], [(Ttfac)Ag(TMVS)]
and [(Btfac)Ag(TMVS)]. All these compounds have been
characterized by 1H NMR, 13C NMR and IR spectra.
Continuously, (hfac)Ag(BTMSA), (fod)Ag(BTMSA), (hfac)Ag(TEVS)
and (hfac)Ag(TMVS) have been examined as precursors for low-
pressure chemical vapor deposition of silver thin films. Hot-
wall CVD experiments under low pressure (100 mtorr), or with 8﹪
H2/N2 carrier gas (300sccm；about 11torr) can deposit highly
pure silver films on silicon and silicon oxide substrates at
deposition temperature range 150-250℃. These films have been
characterized and analyzed by XRD, SEM, EDX, AFM, ESCA and AA.
The results showed that these are polycrystalline silver films
with high films with high purity. The deposition rate are 0.4-40
A/min.
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