Characterization of the RuO2/SiO2/Si MOS structures
碩士 === 國立台灣工業技術學院 === 電子工程技術研究所 === 85 === RuO2 thin film are deposited on the SiO2/Si substrates by reactive sputtering method under different substrate temperatures. The properties of the RuO2 films are characterized by Raman sca...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09076662529832285940 |