| Summary: | 碩士 === 國立台灣工業技術學院 === 電子工程技術研究所 === 85 === In this thesis, we discuss some basic theories of spread-
spectrumtechnology, and the implementation of baseband and RF
circuits. We firstuse a spread-spectrum IC to discuss the
design and theory of spread spectrum technology. By
practicing measurements, we then thorough byelaborate
spread-spectrum theory. The output bandwidth of the spread-
spectrum IC is 1.3888MHz, the bit duration of input signal is
11.725s,the chip duration is 720ns, and the processing gain is
15.128dB. In RFpower amplifier, we implement a two-stages
amplifier consisting of CLY2(GaAs MESFET) and BLT81(BJT). The
output power of the amplifier is32.12dBm and the gain
22.12dB. The power amplifier has IP3 at 42.12dBm,and the
efficient of the amplifier is 39%.
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