Modeling of Submicron and Deep-submicron MOSFETs Current-Voltage Characteristics
博士 === 國立台灣工業技術學院 === 電子工程技術研究所 === 85 === In this thesis, we develop several $I-V$ models for submicron and deep submicron SOI and bulk MOSFETs, including single-gate and double-gate SOI devices.First we present a model for fully overlapped and partially...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14332084816546615426 |