Studies on the initial growth of Synthesis Cu Film by Using Cu( hfa)2 Precursor
碩士 === 國立台灣工業技術學院 === 化學工程技術研究所 === 85 === Film growth's mechanism in a metalorganic chemical vapor deposition(MOCVD)rea-ction system using Cu( hexafluoroacetomate)2 [Cu(hfa)2] as precursor to form Cu film was studied. Atomic force m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62417690564516290970 |