Studies on the initial growth of Synthesis Cu Film by Using Cu( hfa)2 Precursor

• Main Authors: Kuo, Cheng-Hung, 郭正宏
• Other Authors: Lu-Sheng Hong
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/62417690564516290970

碩士 === 國立台灣工業技術學院 === 化學工程技術研究所 === 85 === Film growth's mechanism in a metalorganic chemical vapor deposition(MOCVD)rea-ction system using Cu( hexafluoroacetomate)2 [Cu(hfa)2] as precursor to form Cu film was studied. Atomic force microscopy (AFM) was successfully applied to investigate the initial stage of Cu nucleation. Emphasis was laid on understan-ding the surface reaction behavior of the precursor by invesigating the earlystage of Cu nucleation on various substrates surface and carrier gases.The dep-osition experiment was performed in a cold-wall vertical CVD at reaction temp-erature range of 350-410 degree C .When hydrogen was used as carrier gas ,the ac-tivation energy of the initial nucleation of Cu are 8.7 kcal/mol on Pt ,9.3 kcal/mol on n-Si ,10.8 kcal/mol on p-Si and 31.1 kcal/mol on SiO//2, respectiv-ity.These activation energys increase when argon was used as carrier gas ,whichsuggest that hydrogen did participate in reaction .Also ,the surface itself w-as found to play a catalytical role to provide active site for Cu nucleation .A surface reaction mechanism was proposed by which selective growth behavior ofthis reaction system can be controlled.