| Summary: | 碩士 === 國立台灣工業技術學院 === 化學工程技術研究所 === 85 === Film growth's mechanism in a metalorganic chemical vapor
deposition(MOCVD)rea-ction system using Cu(
hexafluoroacetomate)2 [Cu(hfa)2] as precursor to form Cu film
was studied. Atomic force microscopy (AFM) was successfully
applied to investigate the initial stage of Cu nucleation.
Emphasis was laid on understan-ding the surface reaction
behavior of the precursor by invesigating the earlystage of Cu
nucleation on various substrates surface and carrier gases.The
dep-osition experiment was performed in a cold-wall vertical CVD
at reaction temp-erature range of 350-410 degree C .When
hydrogen was used as carrier gas ,the ac-tivation energy of the
initial nucleation of Cu are 8.7 kcal/mol on Pt ,9.3 kcal/mol on
n-Si ,10.8 kcal/mol on p-Si and 31.1 kcal/mol on SiO//2,
respectiv-ity.These activation energys increase when argon was
used as carrier gas ,whichsuggest that hydrogen did participate
in reaction .Also ,the surface itself w-as found to play a
catalytical role to provide active site for Cu nucleation .A
surface reaction mechanism was proposed by which selective
growth behavior ofthis reaction system can be controlled.
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