Improvement on the Electrical Properties of In-situ Phosphorus Doped Hydrogenated Polycrystalline Silicon Thin Films Grown by Low Temperature ECR-CVD
碩士 === 國立清華大學 === 電機工程學研究所 === 85 === Low temperature fabrication of polycrystalline silicon thin film transistors (poly-Si TFTs), solar cells and other semiconductor memory application is the new trend of development in recent years. Our group has succeeded to grow large grain undoped poly-si...
Main Authors: | Lee, Ruh-San, 李日參 |
---|---|
Other Authors: | Hwang, Huey-Liang |
Format: | Others |
Language: | zh-TW |
Published: |
1997
|
Online Access: | http://ndltd.ncl.edu.tw/handle/82889998031867714263 |
Similar Items
-
STUDIES ON HYDROGENATED POLYCRYSTALLINE SILICON THIN FILMSOSITED BY ECR-CVD AND PE-CVD
by: Wang, Kun Chih, et al.
Published: (1995) -
Study on electrical and structural properties of low temperature boron-and phosphorus-doped polycrystalline silicon thin films prepared by ECR-CVD
by: Xie, Yong-Yan, et al.
Published: (1998) -
Growth silicon nanowires by ECR-CVD
by: 杜偉新
Published: (2004) -
Study on the Low Temperature Growth of Silicon Nitride and Phosphrous Doped Poly Silicon Thin Films by ECR-CVD
by: Wang; Ruo Yu, et al.
Published: (1996) -
A Study of Microcrystalline Silicon Thin Film Deposited By ECR-CVD
by: Lin Wun Bin, et al.
Published: (2011)