Annealing Behaviors of Very Low Enery, High Dose Ion Implanted (001) Si
博士 === 國立清華大學 === 材料科學與工程學研究所 === 85 === The solid phase epitaxial (SPE) regrowth of 5 keV, 5 x 10^15 /cm2P+ and As+ implanted (001) Si has been investigated by high resolution electron microscopy (HRTEM). Two significantly different SPE regrowth stages were found. In P+ implanted samples, the lo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55047542913018575311 |