Improvement of Oxynitride MOS device

Improvement of Oxynitride MOS device

碩士 === 國立清華大學 === 核子工程與工程物理系 === 85 ===

Bibliographic Details
Main Authors: Lai, Han-Chao, 賴漢昭
Other Authors: Kuei-Shu Chang-Liao
Format: Others
Language:zh-TW
Published: 1997
Online Access:http://ndltd.ncl.edu.tw/handle/15507677842600896614
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spelling ndltd-TW-085NTHU02650072015-10-13T18:05:29Z http://ndltd.ncl.edu.tw/handle/15507677842600896614 Improvement of Oxynitride MOS device 製作含氮氧化層以改善金氧半元件抗性研究 Lai, Han-Chao 賴漢昭 碩士 國立清華大學 核子工程與工程物理系 85 Kuei-Shu Chang-Liao 張廖貴術 1997 學位論文 ; thesis 107 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立清華大學 === 核子工程與工程物理系 === 85 ===
author2 Kuei-Shu Chang-Liao
author_facet Kuei-Shu Chang-Liao
Lai, Han-Chao
賴漢昭
author Lai, Han-Chao
賴漢昭
spellingShingle Lai, Han-Chao
賴漢昭
Improvement of Oxynitride MOS device
author_sort Lai, Han-Chao
title Improvement of Oxynitride MOS device
title_short Improvement of Oxynitride MOS device
title_full Improvement of Oxynitride MOS device
title_fullStr Improvement of Oxynitride MOS device
title_full_unstemmed Improvement of Oxynitride MOS device
title_sort improvement of oxynitride mos device
publishDate 1997
url http://ndltd.ncl.edu.tw/handle/15507677842600896614
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AT làihànzhāo improvementofoxynitridemosdevice
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AT làihànzhāo zhìzuòhándànyǎnghuàcéngyǐgǎishànjīnyǎngbànyuánjiànkàngxìngyánjiū
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