Summary: | 碩士 === 國立中央大學 === 電機工程學系 === 85 === The telecommunication channels are becoming jammed in recent
years. It leads to the development in the aspect of high
frequency circuits. In pursuit of high quality telecommunication
products, the improvement of high frequency circuits is
necessary, which makes transistor model of active component
crucial in this situation. Considering the lower cost of silicon
transistors, we extracted the component parameters from the
circuit model of silicon transistor to increase the reliability
in the circuit simulation. Our bipolar junction transistor was
the Gummel Poon model. We measured the S-parameters for both the
low frequency (20MHz-50MHz) and high frequency (40MHz-2GHz), and
in this way we could calculate the internal component parameter
instead of calculating it from the optimal simulation. In
addition, we can have better initial values for other
parameters. The DC part of the Gummel Poon parameter could be
determined by measured Gummel Plots. The non-linear capacitor
parameters could be calculated from the optimal simulation, and
as a result the Gummel Poon model could be set. This model was
then used in the design of high frequency circuit. For example,
it could predict the frequency and phase noise of the VCO and
improve its circuit characteristics. For MOSFET, we used the
component with a TSMC gatelength of 0.6 um to measure its high
frequency characteristics and resulted in an Ft value of 13.5
GHz, which was applicable in high frequency. Moreover, we also
simulated its "small-signal" and "large-signal" models, and
applied these in the high frequency circuits. We then used the
results measured from this component to simulate the
characteristics of LNA, and determined the phase noise to be
3.7dB, which implied that the development of this model would
contribute to the application of MOSFET in the high frequency
circuits.
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