The Application of ITO on InGaP/GaAs MSM photodetector
碩士 === 國立中央大學 === 光電(科學)研究所 === 85 === With InGaP capping layer and ITO electrode,we had fabricated MSM-PD with high perforance.At 5V bias,the dark current 52.85pA, FWHM 44.6pS,and responsivity 0.58A/W are obtained.
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98614552279043853059 |
| Summary: | 碩士 === 國立中央大學 === 光電(科學)研究所 === 85 === With InGaP capping layer and ITO electrode,we had fabricated
MSM-PD with high perforance.At 5V bias,the dark current 52.85pA,
FWHM 44.6pS,and responsivity 0.58A/W are obtained.
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