Design and fabrication of InGaP/GaAs monolithically integrated photorecivier
碩士 === 國立中央大學 === 光電(科學)研究所 === 85 === In this paper, the monolithically integrated photoreceiver of a metal-semi conductor-metal photodetector (MSM-PD) and metal- semiconductor field effect transistors is researched. With InGaP capping...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96738831750088584055 |