Stress Control of Silicon-Rich Nitride Membrance and Tungsten-Tantalum-Nitrogen Absorber for X-Ray Mask
碩士 === 國立交通大學 === 應用化學研究所 === 85 === X-ray lithography has the advantages of better resolution (limited at 0.05 um and below), larger depth of focus, less diffraction effect, nearly no substrate reflection, nearly no standing wave, and larger exposure area etc. X-ray lithography will be one of t...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/99352542142184830109 |