Growth of silicon carbide thin films from 1,2-dimethyldisilane by low temperature chemical vapor deposition

碩士 === 國立交通大學 === 應用化學研究所 === 85 === 1,2-Dimethyldisilane was used as a single precursor to deposit siliconcarbide thin films by low pressure chemical vapor deposition. The filmswere deposited under two different conditions which were thermal activation only and with Ar as the carri...

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Bibliographic Details
Main Authors:	Hu,Li-Wen, 胡力文
Other Authors:	Chiu,Hsin-Tien
Format:	Others
Language:	zh-TW
Published:	1997
Online Access:	http://ndltd.ncl.edu.tw/handle/43683318001581858821

id	ndltd-TW-085NCTU0500010
record_format	oai_dc
spelling	ndltd-TW-085NCTU05000102015-10-13T17:59:39Z http://ndltd.ncl.edu.tw/handle/43683318001581858821 Growth of silicon carbide thin films from 1,2-dimethyldisilane by low temperature chemical vapor deposition 以1,2-二甲基二矽烷經低溫化學氣相沉積成長碳化矽薄膜 Hu,Li-Wen 胡力文碩士國立交通大學應用化學研究所 85 1,2-Dimethyldisilane was used as a single precursor to deposit siliconcarbide thin films by low pressure chemical vapor deposition. The filmswere deposited under two different conditions which were thermal activation only and with Ar as the carrier gases. Using this precursor, thelowest possible temperature to grow silicon carbide films was achieved at773 K. The thin films were characterized by XRD, SEM, FT-IR andESCA,AES. Decomposition of CH3SiH2SiH2CH3 into intermediatesCH3SiH (methylsilyene) and CH3SiH3(methylsilane) is proposed for thisreaction to rationalize this low temperature process Chiu,Hsin-Tien 裘性天 1997 學位論文 ; thesis 51 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立交通大學 === 應用化學研究所 === 85 === 1,2-Dimethyldisilane was used as a single precursor to deposit siliconcarbide thin films by low pressure chemical vapor deposition. The filmswere deposited under two different conditions which were thermal activation only and with Ar as the carrier gases. Using this precursor, thelowest possible temperature to grow silicon carbide films was achieved at773 K. The thin films were characterized by XRD, SEM, FT-IR andESCA,AES. Decomposition of CH3SiH2SiH2CH3 into intermediatesCH3SiH (methylsilyene) and CH3SiH3(methylsilane) is proposed for thisreaction to rationalize this low temperature process
author2	Chiu,Hsin-Tien
author_facet	Chiu,Hsin-Tien Hu,Li-Wen 胡力文
author	Hu,Li-Wen 胡力文
spellingShingle	Hu,Li-Wen 胡力文 Growth of silicon carbide thin films from 1,2-dimethyldisilane by low temperature chemical vapor deposition
author_sort	Hu,Li-Wen
title	Growth of silicon carbide thin films from 1,2-dimethyldisilane by low temperature chemical vapor deposition
title_short	Growth of silicon carbide thin films from 1,2-dimethyldisilane by low temperature chemical vapor deposition
title_full	Growth of silicon carbide thin films from 1,2-dimethyldisilane by low temperature chemical vapor deposition
title_fullStr	Growth of silicon carbide thin films from 1,2-dimethyldisilane by low temperature chemical vapor deposition
title_full_unstemmed	Growth of silicon carbide thin films from 1,2-dimethyldisilane by low temperature chemical vapor deposition
title_sort	growth of silicon carbide thin films from 1,2-dimethyldisilane by low temperature chemical vapor deposition
publishDate	1997
url	http://ndltd.ncl.edu.tw/handle/43683318001581858821
work_keys_str_mv	AT huliwen growthofsiliconcarbidethinfilmsfrom12dimethyldisilanebylowtemperaturechemicalvapordeposition AT húlìwén growthofsiliconcarbidethinfilmsfrom12dimethyldisilanebylowtemperaturechemicalvapordeposition AT huliwen yǐ12èrjiǎjīèrxìwánjīngdīwēnhuàxuéqìxiāngchénjīchéngzhǎngtànhuàxìbáomó AT húlìwén yǐ12èrjiǎjīèrxìwánjīngdīwēnhuàxuéqìxiāngchénjīchéngzhǎngtànhuàxìbáomó
_version_	1717786164732100608

Growth of silicon carbide thin films from 1,2-dimethyldisilane by low temperature chemical vapor deposition

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