| Summary: | 碩士 === 國立交通大學 === 應用化學研究所 === 85 === 1,2-Dimethyldisilane was used as a single precursor to deposit siliconcarbide thin films by low pressure chemical vapor deposition. The filmswere deposited under two different conditions which were thermal activation only and with Ar as the carrier gases. Using this precursor, thelowest possible temperature to grow silicon carbide films was achieved at773 K. The thin films were characterized by XRD, SEM, FT-IR andESCA,AES. Decomposition of CH3SiH2SiH2CH3 into intermediatesCH3SiH (methylsilyene) and CH3SiH3(methylsilane) is proposed for thisreaction to rationalize this low temperature process
|
|---|
