Studies of Nonlinear Saturable Absorption and Reflectivity of InGaAlAs/AlGaAs Saturable Bragg Reflectors

• Main Authors: Lee, Hong-wei, 李宏偉
• Other Authors: Huang Kai-Feng
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/33777403331884321965

碩士 === 國立交通大學 === 電子物理學系 === 85 === In this thesis, we studied the nonlinear saturable absorption and reflectivity of the saturable Bragg reflectors. The device structure can be regarded as a high reflectivity Bragg mirror incorporated with semiconductor InGaAlAs/AlGaAs muilti- quantum wells. These wells are used as saturable absorbers whose optical property dominates the dynamics of passive mode-locking. The overall device structure is controlled by molecular beam epitaxy (MBE) . It is successfully used for passive mode locking the Ti:sapphire laser to obtain 100fs ultra-short pulses. Besides,we observe the alteration of reflectivity by changing the thickness of epitaxial lay ers and compare it with simulation results. the experimental data shows that when the absorption peak of the multiquantum wells is located within the high-broad re -flection band, the charateristics of the output pulses, such as pulse width, tun -ing range, and stability...etc.,can be highly improved. Finally, the optical pro -perties of strained quantum well and the dynamics of mode-locking are also diss- cussed.