The Study on Compound Semiconductor Solar Cells

• Main Authors: Yang, Yu-Hui, 楊玉惠
• Other Authors: Lee Wei-I
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/83294354263500423642

碩士 === 國立交通大學 === 電子物理學系 === 85 === GaAs solar cell has the advantage of high efficiency and radiation hardness,is suitable for terrestial and space aaplication.In this work,we have fabricatedAlGaAs/GaAs heteroface p-n junction solar cells which were grown by low pressure MOCVD system.The metallization was performed by evaporating Au-Ge for back contact and Au-Be for front contact, the lift-off process of front grid pattern was using image- reversal lithography technique to get thicker front contact easily to minimize series resistance.A Al2O3 layer with suitable thickness was used asanti-reflecting coating to reduce the reflectivity of cell. The efficiency ofour best cell is 19.8% at AM1.5 70mW/cm2,the Jsc,Voc,and fill factor(FF) are17.6mA/ cm2,1.01V,78.23% respectively. The theoretical efficiencies of series-connected,p-n GaInP/GaAs solar cell at near AM0 spectra(using 5800K black-body radition,total power density is 1353W/m2) are also calculated.Under the limitation of current match of top GaInP cell and buttonGaAs cell,optimized top GaInP cell total thickness,emitter thickness,basethickness,emitter doping concentration,and base doping concentation are determined. According to our calculation,the theoretical efficiency of p-n GaInP/GaAstandem solar cell is 27.68% at AM0.