| Summary: | 碩士 === 國立交通大學 === 電子物理學系 === 85 === GaAs solar cell has the advantage of high efficiency and
radiation hardness,is suitable for terrestial and space
aaplication.In this work,we have fabricatedAlGaAs/GaAs
heteroface p-n junction solar cells which were grown by low
pressure MOCVD system.The metallization was performed by
evaporating Au-Ge for back contact and Au-Be for front contact,
the lift-off process of front grid pattern was using image-
reversal lithography technique to get thicker front contact
easily to minimize series resistance.A Al2O3 layer with suitable
thickness was used asanti-reflecting coating to reduce the
reflectivity of cell. The efficiency ofour best cell is 19.8% at
AM1.5 70mW/cm2,the Jsc,Voc,and fill factor(FF) are17.6mA/
cm2,1.01V,78.23% respectively. The theoretical efficiencies
of series-connected,p-n GaInP/GaAs solar cell at near AM0
spectra(using 5800K black-body radition,total power density is
1353W/m2) are also calculated.Under the limitation of current
match of top GaInP cell and buttonGaAs cell,optimized top GaInP
cell total thickness,emitter thickness,basethickness,emitter
doping concentration,and base doping concentation are
determined. According to our calculation,the theoretical
efficiency of p-n GaInP/GaAstandem solar cell is 27.68% at AM0.
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