The effect of Ti-silicide gate structure for thin gate oxide
碩士 === 國立交通大學 === 電子工程學系 === 85 === In this thesis, a novel gate structure using self-aligned TiSi2 (Ti-salicide)process has been proposed. First, we investigated the effect of temperature on the sheet resistance and the electrical charact...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26507286410823567993 |