Study of Ta2O5 as Ultra-Thin Stacked Gate Material and Leakage Current Reduction by Plasma Annealing

碩士 === 國立交通大學 === 電子工程學系 === 85 === Previous study used CVD oxide/thermal SiO2 stacked dielectric for MOS gate material with the advantages of high resistance to process induced defect density. Ta2O5/thermal SiO2 stacked gate dielectrics h...

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Bibliographic Details
Main Authors: Huang, Yi-Lee, 黃以理
Other Authors: Shi-Chung Sun
Format: Others
Language:zh-TW
Published: 1997
Online Access:http://ndltd.ncl.edu.tw/handle/99880136187773641780

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