Study of Ta2O5 as Ultra-Thin Stacked Gate Material and Leakage Current Reduction by Plasma Annealing
碩士 === 國立交通大學 === 電子工程學系 === 85 === Previous study used CVD oxide/thermal SiO2 stacked dielectric for MOS gate material with the advantages of high resistance to process induced defect density. Ta2O5/thermal SiO2 stacked gate dielectrics h...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99880136187773641780 |