Investigation of Oxide-Damage-Induced Reliability Issues in VLSI MOSFET Devices by Using Transient Spectroscopic Techniques

Investigation of Oxide-Damage-Induced Reliability Issues in VLSI MOSFET Devices by Using Transient Spectroscopic Techniques

博士 === 國立交通大學 === 電子工程學系 === 85 === Electrical stress induced oxide reliability issues have received considerable interest in deep submicron VLSI technology. In this dissertation, five reliability research topics have been studied. First, an interface tra...

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Main Authors: Chang, Tse-En, 張澤恩
Other Authors: Tahui Wang
Format: Others
Language:zh-TW
Published: 1997
Online Access:http://ndltd.ncl.edu.tw/handle/50318565909887293512
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spelling ndltd-TW-085NCTU04280582015-10-13T17:59:38Z http://ndltd.ncl.edu.tw/handle/50318565909887293512 Investigation of Oxide-Damage-Induced Reliability Issues in VLSI MOSFET Devices by Using Transient Spectroscopic Techniques 利用暫態電流量測技術研究超大型積體電路元件中氧化層之可靠度 Chang, Tse-En 張澤恩 博士 國立交通大學 電子工程學系 85 Electrical stress induced oxide reliability issues have received considerable interest in deep submicron VLSI technology. In this dissertation, five reliability research topics have been studied. First, an interface trap induced drain leakage current in an off-state MOSFET was characterized by a complete thermionic and field emission model. In the model, a complete band-trap-band leakage path is formed at the Si/SiO2 interface by hole emission from interface traps to a valence band and electron emission fro Tahui Wang 汪大暉 1997 學位論文 ; thesis 130 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 博士 === 國立交通大學 === 電子工程學系 === 85 === Electrical stress induced oxide reliability issues have received considerable interest in deep submicron VLSI technology. In this dissertation, five reliability research topics have been studied. First, an interface trap induced drain leakage current in an off-state MOSFET was characterized by a complete thermionic and field emission model. In the model, a complete band-trap-band leakage path is formed at the Si/SiO2 interface by hole emission from interface traps to a valence band and electron emission fro
author2 Tahui Wang
author_facet Tahui Wang
Chang, Tse-En
張澤恩
author Chang, Tse-En
張澤恩
spellingShingle Chang, Tse-En
張澤恩
Investigation of Oxide-Damage-Induced Reliability Issues in VLSI MOSFET Devices by Using Transient Spectroscopic Techniques
author_sort Chang, Tse-En
title Investigation of Oxide-Damage-Induced Reliability Issues in VLSI MOSFET Devices by Using Transient Spectroscopic Techniques
title_short Investigation of Oxide-Damage-Induced Reliability Issues in VLSI MOSFET Devices by Using Transient Spectroscopic Techniques
title_full Investigation of Oxide-Damage-Induced Reliability Issues in VLSI MOSFET Devices by Using Transient Spectroscopic Techniques
title_fullStr Investigation of Oxide-Damage-Induced Reliability Issues in VLSI MOSFET Devices by Using Transient Spectroscopic Techniques
title_full_unstemmed Investigation of Oxide-Damage-Induced Reliability Issues in VLSI MOSFET Devices by Using Transient Spectroscopic Techniques
title_sort investigation of oxide-damage-induced reliability issues in vlsi mosfet devices by using transient spectroscopic techniques
publishDate 1997
url http://ndltd.ncl.edu.tw/handle/50318565909887293512
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