Investigation of Oxide-Damage-Induced Reliability Issues in VLSI MOSFET Devices by Using Transient Spectroscopic Techniques
博士 === 國立交通大學 === 電子工程學系 === 85 === Electrical stress induced oxide reliability issues have received considerable interest in deep submicron VLSI technology. In this dissertation, five reliability research topics have been studied. First, an interface tra...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50318565909887293512 |
| Summary: | 博士 === 國立交通大學 === 電子工程學系 === 85 === Electrical stress induced oxide reliability issues have received
considerable interest in deep submicron VLSI technology. In this
dissertation, five reliability research topics have been
studied. First, an interface trap induced drain leakage current
in an off-state MOSFET was characterized by a complete
thermionic and field emission model. In the model, a complete
band-trap-band leakage path is formed at the Si/SiO2 interface
by hole emission from interface traps to a valence band and
electron emission fro
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