Low-Temperature (≦700℃) Fabrication of Interpolysilicon Oxide and Its Impact on Tunnel Oxide

Low-Temperature (≦700℃) Fabrication of Interpolysilicon Oxide and Its Impact on Tunnel Oxide

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碩士 === 國立交通大學 === 電子工程學系 === 85 === The low-temperature (≦700℃) fabrication of interpolysilicon oxide and its impact ontunnel oxide is studied. This process combines the in-situ phosphorus dopedpolysilicon and TEOS deposited oxide. The obta...

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Bibliographic Details
Main Authors:	Chen, Hong-Chi, 陳鴻祺
Other Authors:	Lei Tan-Fu
Format:	Others
Language:	zh-TW
Published:	1997
Online Access:	http://ndltd.ncl.edu.tw/handle/55634478512578228063

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