Low-Temperature (≦700℃) Fabrication of Interpolysilicon Oxide and Its Impact on Tunnel Oxide
碩士 === 國立交通大學 === 電子工程學系 === 85 === The low-temperature (≦700℃) fabrication of interpolysilicon oxide and its impact ontunnel oxide is studied. This process combines the in-situ phosphorus dopedpolysilicon and TEOS deposited oxide. The obta...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55634478512578228063 |
| Summary: | 碩士 === 國立交通大學 === 電子工程學系 === 85 === The low-temperature (≦700℃) fabrication of interpolysilicon
oxide and its impact ontunnel oxide is studied. This process
combines the in-situ phosphorus dopedpolysilicon and TEOS
deposited oxide. The obtained interpolysilicon oxide has
superior electrical characteristics such as lower conductivity,
higherbreakdown electric field, and higher Qbd than those of
conventional interpolysilicon oxide. Moreover, during
fabricating interpolysilicon oxide , the post-polsilicon gate-
process-induced degradation such as Qbd and stress-induced
leakage current degradation of tunnel oxide can be evidently
lessenedby this method.
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