Low-Temperature (≦700℃) Fabrication of Interpolysilicon Oxide and Its Impact on Tunnel Oxide
碩士 === 國立交通大學 === 電子工程學系 === 85 === The low-temperature (≦700℃) fabrication of interpolysilicon oxide and its impact ontunnel oxide is studied. This process combines the in-situ phosphorus dopedpolysilicon and TEOS deposited oxide. The obta...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55634478512578228063 |