The Study of High-Energy Implantation Lsolation in GaAs/AlGaAs/
碩士 === 國立交通大學 === 材料科學與工程研究所 === 85 === The electrical properties of the high resistance layers in the GaAs / AlGaAs epi-layer structure produced by O+ / He+ , B+ and O+ multi - energy ion implantation have been studied . It was shown that...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46751929175770845159 |