The Study of GaAs Power MESFETs Passivated with Photo-CVD and PECVD Silicon Nitride Films
碩士 === 國立交通大學 === 材料科學與工程研究所 === 85 === This thesis described the passivation of GaAs power MESFETs using either Photo-CVD or PECVD silicon nitride films. In the photo-CVD passivation process, hydrogenated amorphous silicon nitride fi...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46147144040005861479 |