Fabrication, parameter extraction, and modeling of Si and SiC schottky barrier diodes considering carrier injection effects
碩士 === 國立成功大學 === 電機工程研究所 === 85 ===
Main Authors: | Zeng, Jian-Ting, 曾健庭 |
---|---|
Other Authors: | Wang, Shui-Jin |
Format: | Others |
Language: | zh-TW |
Published: |
1997
|
Online Access: | http://ndltd.ncl.edu.tw/handle/68093280319046943111 |
Similar Items
-
Fabrication of 4H-SiC Junction Barrier Schottky Diode
by: Yuan-Heng Liu, et al.
Published: (2015) -
The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts
by: Kundeti, Krishna Chaitanya
Published: (2017) -
Theoretical modelling of Schottky barrier diodes in SiC
by: Blasciuc-Dimitriu, Cezar
Published: (2004) -
The Design and Fabrication of High Voltage 4H-SiC Junction Barrier Schottky Diode
by: Le-Shan Chan, et al.
Published: (2014) -
Effect of temperature on the carrier transport property of 4H-SiC based Schottky barrier diode
by: TONG Wulin, et al.
Published: (2015-08-01)