β-SiC/Si Heterostructure Negative-Differential-Resistance Devices

• Main Authors: Chen, T.Z., 陳則敬
• Other Authors: Fang, Y.K.
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/07551542495243122332

碩士 === 國立成功大學 === 電機工程學系 === 85 === 　　In this thesis, we reported the first observation of negative-differential-resistance (NDR) characteristics in β-SiC/c-Si hetero-structures. Models based on the multi-tunneling capture-emission (MTCE) process were proposed to explain the NDR phenomena in these heterostructures. 　　Two bi-directional N-shaped NDR diodes, one based on the p-SiC/n-Si and the other on the n-SiC/p-Si heterostructures, were successfully fabricated. The typical peak-to-valley current ratios (PVCRs) at forward and reverse biases are 44.2 and 337.5, 21.3 and 236.5 for these two NDR diodes, respectively. Furthermore, a gate-controllable three-terminal device with forward S-shaped and reverse N-shaped NDRs was developed. A largest switching voltage of 39.5 V at the forward region and a highest PVCR of 11815.2 at the reverse region were achieved under a gate voltage of 0.5V. 　　High-temperature NDR characteristics were also investigated in all these devices. The NDR characteristics of these devices can be maintained up to 200℃, thus indicating the developed SiC/Si heterostructure NDR devices possess a potential for high-temperature applications.