| Summary: | 碩士 === 國立成功大學 === 電機工程學系 === 85 ===
In this thesis, we reported the first observation of negative-differential-resistance (NDR) characteristics in β-SiC/c-Si hetero-structures. Models based on the multi-tunneling capture-emission (MTCE) process were proposed to explain the NDR phenomena in these heterostructures.
Two bi-directional N-shaped NDR diodes, one based on the p-SiC/n-Si and the other on the n-SiC/p-Si heterostructures, were successfully fabricated. The typical peak-to-valley current ratios (PVCRs) at forward and reverse biases are 44.2 and 337.5, 21.3 and 236.5 for these two NDR diodes, respectively. Furthermore, a gate-controllable three-terminal device with forward S-shaped and reverse N-shaped NDRs was developed. A largest switching voltage of 39.5 V at the forward region and a highest PVCR of 11815.2 at the reverse region were achieved under a gate voltage of 0.5V.
High-temperature NDR characteristics were also investigated in all these devices. The NDR characteristics of these devices can be maintained up to 200℃, thus indicating the developed SiC/Si heterostructure NDR devices possess a potential for high-temperature applications.
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