The Study of HgCdTe Far Infrared Photodiodes
碩士 === 國立成功大學 === 電機工程學系 === 85 === A detail study has been made of the current-voltage characteristics of Hg1-xCdxTe ion-implanted p-n junctions with x□0.22. It is found that the dark currents, can be represented three current components over a broad range of voltage and temperature. A diffusi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36843821245974844730 |