Low Pressure Chemical Vapor Deposition of Boron Nitride Thin Films Using Borontrichloride and Ammonia.

• Main Authors: PAN, CHIEN-HSIUN, 潘建勳
• Other Authors: HUANG JOW-LAY
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/02162186288267224827

碩士 === 國立成功大學 === 材料科學(工程)學系 === 85 === ABSTRACT Thermodynamic analysis of boron nitride(BN) films from borontrichloride(BCl3)-ammonia(NH3) reaction system are studied in this thesis. From stoichiometric algorithm for chemical equilibrium, it is possible to predict products and theirthermal yields changing with respect to the reaction parameters. The results canbe a theoretical basis of chemical vapor deposition process. According to the theoretical results, by hydrogen or nitrogen added into BCl3-NH3 reaction system, at temperatures between 1000 and 1300K and total pressure of 0.001~0.1atm, major species of this system at equilibrium include boron nitride, boron, HCl, BCl2, BCl and BHCl2. Amorphous and turbostratic boron nitride films are able to be deposited onto graphite plates by low pressure chemical vapor deposition in BCl3-NH3-N2 reaction system at a deposition temperature of 1100K, the total pressure of 5 torr and NH3/BCl3 ratio = 1.5. After heating up to 2123K and for 1.5 hours, thestructure of the films were transferred from amorphous to hexagonal boron nitride.