Magnetoresistance in Co-Sputtered Cu-Ni-Fe Films

• Main Authors: Huang, T.A, 黃田安
• Other Authors: Chen, L.H
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/43050901531354990396

碩士 === 義守大學 === 材料科學與工程研究所 === 85 === Cu-Ni-Fe films have been grown on Si(100) substrates by a d.c. magnetron cosputtering. A strong composition dependence of the magnetoresistance behavior is found in these Cu-Ni-Fe films. The giant magnetoresistance contribution dominates the magnetoresistance behavior in the films with Cu content higher than 50%. However, the anisotropic magnetoresistance effect tends to icnrease as the Cu content decreases. For example, the Cu50Ni25Fe25 films consists of two components of magnetoresistance with anisotropic magnetoresistance at low fields and giant magnetoresistance extended to higher fields. The ARM effect is believed to be correlated with the electron scattering from the ferromagnetic (Ni, Fe)-rich phase. The very large saturation field (>6T) in the MR curve and the positive temperature dependence of MR ratio suggest that the observed GMR effect may come from the interfacial spin-dependent scattering as well as scattering due to magnetic fluctuations such as very fine superparamagnetic particles and/or ferromagnetic area around the (Ni, Fe)-rich phase. After annealing, the magnetizeor and MR ratio of films is increased, which is believe to be a result of the modification of microstructure.