| Summary: | 碩士 === 大同工學院 === 化學工程學系 === 84 === Three series of silicon containing copolymers werer synthesized
by the solution free-radical copolymerization with
azobisisobutyronitrile(AIBN) in 1,4-dioxane at 50-70 C. For
study on the effects of reaction temperature, feed ratio,
initiator concentration and solvent on the reaction of
copolymerization, various synthesis conditions were used to
prepare copolymers.Photopolymers were designed by esterification
of PASiMAA (PTSiMAA, or PTSiAA) with ortho-BMNB (para-BMNB)
using 1,8-diazabicyclo-[5,4,0]-7-undecene (DBU) as the base in
the aprotic solvent.All copolymers (PASiMAA, PTSiMAA and PTSiAA)
show good transparencies at wide range wavelengths of UV light,
but the photopolymers have maximum absorption at 260-270nm
resulting from the nitrobenzyl group.When the photopolymer films
were exposed to Deep-UV light, photoinduced internal oxidation-
reduction reaction cause the maximum absorption decreasing and
polymer films becoming base soluble resulting from the
generation of carboxylic acid group.It indicating that they
could be applied to positive acting, aqueous developable
resists. The resolution of the photoresists is about 1.0 um.
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