| Summary: | 碩士 === 國立臺灣科技大學 === 機械工程研究所 === 84 === La0.5Sr0.5CoO3 (LSCO) and Pb0.6Sr0.4CoO3 (PSTO) thin films on
Si(100) have been prepared using pulsed laser deposition by
varying processing parameters to derive controlled growth of
films. La0.5Sr0.5CoO3 thin films of buffer layer on Si(100)
have been prepared using pulsed laser deposition by varying
processing parameters such as energy density of
laser, substrate temperature and oxygen partical
pressure etc. to derive controlled growth of films. If
the substrate temperature between 500 ℃∼ 640 ℃ and oxygen
partical pressure below 0.4 mbar, films with (m00) preferred
orientation could formed. LSCO films with both well controlled
(100)-orientated texture and low resistivity have been grown
on various substrates in the present experiments. The best
resistivity was 58 ∼ 168 μΩ - cm. The average
resistivity was 500 μΩ -cm for all experimental data.
With a preferred-oriented LSCO buffer layer on silicon, a well
textured ferroelectric PSTO films can consequently be grown
easily. If the substrate temperature between 300 ℃∼ 550 ℃
and oxygen partical pressure below 1 mbar, films would be grown
in (m00) preferred orientation. The intensity of (m00) peaks
increase as the energy density of laser increase and oxygen
partical pressure decrease. Processing parameters are more
important than lattice parameter consideration for growing
LSCO films by using pulsed laser deposition. On the
contrary, Lattice parameter are more important than
processing parameters consideration for growing PSTO films.
Beside, the growing temperature of (m00) of (LSCO) differ with
the difference of substrates 。 The temperature was 500 ℃ in
Si(100), and 640 ℃ in glass. The ferroelectric thin films PSTO
was also deposited on the various electrode (PSTO/Pt,
PSTO/LSCO, PSTO/LSCO/Pt ) with desired orientation and
therefore showed proper ferroelectric properties.
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