| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程學系 === 84 === The developement of a simple and low-cost deep-level transient
spectroscopy (DLTS) system automated with a microcomputer for
the analysis of semiconductor device is the main purpose of
this work.By using a Basic soft- ware program, all the
instrumental parameters including temperatures, excitation
pulse freguency, width and am- plitude can be controlled
automatically. CdTe related crystals which was grown by
temperature gradient solution growth (TGSG) are excellent
materials for the fabrication of radiation detectors. The
detect- or performance is improved by doping the crystals in
order to compensate Cd-vacancies. The dopa- nts using Cl,Cr,Fe
and V can become p-type crystals and high resistivity.The trap
density,capture cross section , trap level the materials are
mea-sured with DLTS system.The results of the experiment are as
follow: 1. The DLTS signals can not be detected in undoped
CdTe. 2. The DLTS signals in the Cl-doped CdTe are very weak
due to high resistivity of the crystals. 3. A donor level is
observed at Ev+0.84eV in Cr-doped CdTe . 4. A donor level is
observed at Ev+1.30eV in Fe-doped CdTe
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