Kinetic study of the formation of carbonization layer on Si surface and the afterward SiC film growth
碩士 === 國立臺灣科技大學 === 化學工程研究所 === 84 === Carbonization layer on Si surface is a necessity for overcoming the defects that caused by the lattice mismatch between SiC and Si when heteroepitaxially growing of SiC film on Si substrate by chemical...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49543608563876850356 |