Fundamental Characterizations of DCNAQI-TTF complexes.

• Main Authors: xs, s, 洪榮吉
• Other Authors: Lilian Kao Liu
• Format: Others
• Language: zh-TW
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/87577346612330502721

碩士 === 國立臺灣師範大學 === 化學系 === 84 === DCNAQI reacted with electron donors such as TTF or copper to form charge -transfer complex. We have found that DCNAQI-TTF formed two different ratios of complexes and the activiation energies are between 0.04~0.6 eV. The different conductance of these two complexes is 108 times. The studies of the formation conditions, crystal structure,and their physical properties lead us to develop the photo valve sensorandetector. The properties of the DCNAQI-TTF complexes are better than (DCNAQI)Cu salt because the photo conductanc of the former is unaffected by the oxygen gas and the sensitivity to hydrogen is ten fold betterthan the latter. We also have succeed to improve the properties of in the thin-flimed electrodeto obtain stable electrode. The studies of the surface structure and theequivalent circuit of the " semiconductor / electrode surface " help us tounderstand the (DCNAQI)Cu is stable between 0 and - 0.5 V vs SCE. Under thiscondition, the electrode behaves like n -type semicondctor. In the more positivepotentials, the (DCNAQI)Cu film will be anodicallypolarized. On the other hand, the film will be reduced to p - type semiconductor if the potential shifts to more negative values. This result help us to understand why (DCNAQI)Cu film behave as a p - type semiconductor on copper substrate and as a n - type on ITO conducting glass.