| Summary: | 碩士 === 國立臺灣師範大學 === 化學系 === 84 === DCNAQI reacted with electron donors such as TTF or copper to
form charge -transfer complex. We have found that DCNAQI-TTF
formed two different ratios of complexes and the activiation
energies are between 0.04~0.6 eV. The different conductance of
these two complexes is 108 times. The studies of the formation
conditions, crystal structure,and their physical properties lead
us to develop the photo valve sensorandetector. The properties
of the DCNAQI-TTF complexes are better than (DCNAQI)Cu salt
because the photo conductanc of the former is unaffected by the
oxygen gas and the sensitivity to hydrogen is ten fold
betterthan the latter. We also have succeed
to improve the properties of in the thin-flimed electrodeto
obtain stable electrode. The studies of the surface structure
and theequivalent circuit of the " semiconductor / electrode
surface " help us tounderstand the (DCNAQI)Cu is stable between
0 and - 0.5 V vs SCE. Under thiscondition, the electrode behaves
like n -type semicondctor. In the more positivepotentials, the
(DCNAQI)Cu film will be anodicallypolarized. On the other hand,
the film will be reduced to p - type semiconductor if the
potential shifts to more negative values. This result help us to
understand why (DCNAQI)Cu film behave as a p - type
semiconductor on copper substrate and as a n - type on ITO
conducting glass.
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