An Annealing Treatment for Eliminating Residual Dose in CaF2:Mn
博士 === 國立清華大學 === 原子科學研究所 === 84 === The conventional annealing and readout temperature for CaF2:Mn is 400℃. The TL which lies above the conventional readout and annealing temperature will accumulate after radiation exposures. Two effects caused by the re...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64417751548457607515 |
| Summary: | 博士 === 國立清華大學 === 原子科學研究所 === 84 === The conventional annealing and readout temperature for CaF2:Mn
is 400℃. The TL which lies above the conventional readout and
annealing temperature will accumulate after radiation
exposures. Two effects caused by the residual TL are the
residual phototransfer thermoluminescence (RPTTL) and
thermoltransfer thermoluminescence (TTTL). The latter effect
comes from the thermal dist6urbance. The thermal disturbance
transfers the high temperature TL to the lower temperature glow
peaks. A new annealing treatment for CaF2:Mn has been developed
which can effecvtively erases the residual thermoluminescence
(TL). The new method, which includes an optical as well as a
thermal annealing process, is to expose the previously read
CaF2:Mn chips to a 254 nm UV source with a power of 1.0 mW/cm2
for 40 min and then anneal the TLDs at 500℃ for 40 min. The
experimental results show that RPTTL and the TTTL are
effectively eliminated by the new annealing treatment.
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