A Study on Physical Models for GaAs MESFET Device Simulation
碩士 === 國立中山大學 === 電機工程研究所 === 84 === The GaAs material has two valley property. In our studying, we use the two-valley drift diffusion model instead of conventional single-valley model. Considering calculative time, we build another model,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96436440129461783084 |