THE MBE GROWTH AND CHARACTERIZATION OF GaSb/GaAs HETEROSTRUCTURE
碩士 === 國立中山大學 === 電機工程研究所 === 84 === The MBE ( molecular beam epitaxy ) growth characteristics of gallium antimonide by using Solid Ga(7N) and Sb(6N) as sources were studied mainly through the flux control and substrate temperature . And w...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34483231166088702807 |